| Specification |
| Series |
TS4-M |
TS4-C |
TS4-H |
TS4-B |
Power
suuply |
AC Power |
100-240VAC~50/60Hz |
| AC/DC Power |
24VAC~50/60Hz, 24-48VDC |
| Allowable voltage range |
90 to 110% of rated voltage |
Power
consumption |
AC Power |
Max. 5VA(100-240VAC 50/60Hz) |
| AC/DC Power |
Max. 5V(24VAC 50/60Hz), Max. 3W(24-48VDC) |
| Display method |
7 segment (PV: red, SV: green), other display part(green, red) LED method |
Character
size |
PV(W×H) |
7.0×15.0mm |
9.5×20.0mm |
7.0×14.6mm |
11.0×22.0mm |
| SV(W×H) |
5.0×9.5mm |
7.5×15.0mm |
6.0×12.0mm |
7.0×14.0mm |
Input
type |
RTD |
DIN Pt100Ω, Cu50Ω (Allowable line resistance max.5Ω per a wire) |
| TC |
K(CA), J(IC), L(IC), T(CC), R(PR), S(PR) |
Display
accuracy |
RTD |
At room temperature(23℃ ± 5℃): (PV ± 0.5% or ±1℃, select the higher one) ± 1 digit
Out of room temeperature range: (PV ± 0.5% or ±2℃, select the higher one)± 1 digit
For TM4S-□-P, add ±1℃ by accuracy standard. |
| TC |
Control
output |
Relay |
250VAC~3A 1a |
| SSR |
12VDC= ±2V 20mA Max |
| Alarm output |
AL 1, AL2 Relay: 250VAC~ 1A 1a |
| Control method |
ON/OFF control, P, PI, PD, PID control |
| Hysteresis |
1 to 100℃/℉ (0.1 to 50.0℃/℉) |
| Proportional band(P) |
0.1 to 999.9℃/℉ |
| Integral time(I) |
0 to 9999 sec. |
| Derivative time(D) |
0 to 9999 sec. |
| Control period(T) |
0.5 to 120.0 sec. |
| Manual reset |
0.0 to 100.0% |
| Sampling period |
100ms |
Dielectric
strength |
AC power |
2000VAC 50/60Hz 1 min.(between input terminal and power terminal) |
| AC/DC Power |
1000VAC 50/60Hz 1min.(between input terminal and power terminal) |
| Vibration |
0.75mm amplitude at frequency of 5 to 55Hz in each X, Y, Z direction for 2 hours |
Relay life
cycle |
Mechanical |
OUT: Over 5,000,000 times, AL1/2: Over 5.000,000 times |
| Electrical |
OUT: Over 200,000 times(250VAC 3A resistive load)
AL 1/2: Over 300,000 times(250VAC 1A resistive load) |
| Insulation resistance |
Min. 100MΩ(at 500VDC megger) |
| Noise |
Square-wave noise by noise simulator(pulse width 1µs) ±2KV R-phase and S-phase |
| Memory retention |
Approx. 10 years (when using non-volatile semicnductor memory type) |
| Environment |
Ambient temp. |
-10 to 50℃, Shotage: -20 to 60℃ |
| Ambient humi. |
35 to 85%RH, Shotage: 35 to 85%RH |
| Insulation type |
Double insulation or reinforced insulation (mark: q，dielectric strength between
the measuring input part and the power part: AC power 2kV, AC/DC power 1kV) |
| Weight |
Approx. 147g
(approx. 100g) |
Approx. 203g
(approx. 133g) |
Approx. 194g
(approx. 124g) |
Approx. 275g
(approx. 179g) |